Technology Venture Forum

Agenda


Download the 2012 Agenda here.


Conference Co-chairs

Arifur Rahman
Product Architect
Altera Corporation

Phil Garrou
IEEE Fellow and Consultant
Microelectronics Consultants of NC

WEDNESDAY, Dec. 12

1:00 – 5:00 pm Preconference Symposium
6:00 – 8:00 pm Registration and Welcome Reception
Sponsored by: Tezzaron Semiconductor

THURSDAY, Dec. 13

6:45 – 7:45 am Registration and Continental Breakfast
7:45 am Welcome/Opening Comments
6:00 – 8:00 pm Evening Reception
Sponsored by: EV Group

FRIDAY, Dec. 14

6:45 – 7:45 am Registration and Continental Breakfast
4:15 pm Closing Comments




Preconference Symposium
December 12, 2012 1:00 – 5:00 pm

3-D Chips
Key Developments in Manufacturing, Test, and Standards

The ecosystems for high volume manufacturing of 3-D chips continue to develop. Symposium speakers will provide three important perspectives on where things stand on

Symposium speakers are Drs. Philip Garrou, Erik Jan Marinissen, and Minsuk Suh. Dr. Garrou is a noted 3-D IC industry consultant and his presentations at this conference have met with great acclaim from attendees; Dr. Marinissen is a recognized authority in test technology and standards development; and Dr. Suh is a key leader in SEMATECH's efforts in memory device manufacturing and standards.

  • 2.5-D / 3-D Status 2012

    Philip Garrou
    IEEE Fellow and Consultant
    Microelectronic Consultants of NC

    • Economic status
    • Interposer status
    • Processing
    • Assembly
    • Commercial status
    • Infrastructure development


  • Break 2:10-2:30


  • Testing Three-Dimensional Stacked Integrated Circuits

    Erik Jan Marinissen
    Principal Scientist
    IMEC

    • Challenges and emerging solutions in 3-D-SIC testing
    • Test Flows: pre-bond, mid-bond, post-bond, final test
    • Test Contents: new structures, new defects, new patterns?
    • Test Access: wafer probing and design-for-test


  • Break 3:40-4:00


  • Key Challenge Items for Wide IO Application and its Approach in Standard and Technologies to Solve Them

    Minsuk Suh
    Principal Enginee
    SEMATECH/SK Hynix

    • Wide I/O application
    • Key challenge items
    • Technology approaches
    • Standards



 

 

Conference Agenda
December 13, 2012

Keynote Session
Critical Perspectives on 3-D IC

  • The Evolution of 3-D ICs: Leaping Ahead of Moore's Law to Deliver a 6.8B TransistorDevice

    Liam Madden
    Corporate Vice President
    Xilinx

    • Evolution of 3-D ICs
    • Comparative approaches by industry pioneers
    • 28nm 3-D IC case study: world's highest capacity FPGA and first heterogeneous 3-D FPGA
    • 3-D standards call to action Revolutionary Changes


  • Revolutionary Changes in Memory Technology and the Role of 3-D

    J. Thomas Pawlowski,
    Chief Technologist, Micron Fellow
    Micron Technology

    • Increasing importance of memory
    • Scaling challenges
    • The need for abstraction and demonstration thereof by HMC
    • New system capabilities now reveal shortcomings elsewhere
    • Future directions


  • Moore's Law, Semiconductor Economics, and Other Bellwethers of 3-D IC

    Vinod Kariat
    Vice President of R&D
    Cadence Design Systems

    • 3-D IC challenges: technology, ecosystem, and economics
    • Semiconductor technology landscape and the emergence of the 'advanced node' gap
    • Proof is in the pudding: 3-D IC proof points
    • Solutions and methodologies
    • Next steps


  • Technical Challenges and Progress in an Open Supply Chain Model

    David McCann
    Senior Director
    GLOBALFOUNDRIES

    • Test chip design for the supply chain
    • Design tools
    • Thinning impact on transistors
    • Design for manufacturing
    • Test


  • Perspectives on 3-D-integration; Trends, Drivers, and Possible Solutions

    Carl Engblom
    Director R&D
    Ericsson


  • Break 10:30 – 11:00 am



3-D ICs – Are We Ready?

  • TSV Package Integration: How Close Are We Really?

    Ron Huemoeller
    Senior Vice President, Advanced Product Platform Development
    Amkor Technology

    • Business case
    • Infrastructure / Logistics
    • Assembly readiness
    • Product reliability
    • Product release


  • Bumps on the Road to HVM of 3-D ICs

    Jan Vardaman
    President
    TechSearch International

    • Manufacturing and business issues push out adoption of 3-D TSV
    • Challenges take time to resolve
    • Companies seek alternatives for 3-D TSV
    • Alternatives include interposers or 2.5-D: adoption has started
    • PoP and other conventional stacked die solutions meet short-term needs


  • 3-D IC & TSV Interconnects: Market Update & Infrastructure Readiness

    Lionel Cadix
    Market and Technology Analyst
    Yole Développement

    • The different flavors of 3-D integration
    • Status of commercialization of 3-D ICs
    • Supply chain challenges & infrastructure readiness for high volume manufacturing
    • Challenges / bottlenecks ahead for HVM of 3-D ICs


  • Lunch 12:30 – 1:45 pm
    Sponsored by Cadence Design Systems



Technology Enablers Push Forward

  • Implementing 2.5-D and 3-D Devices

    Robert Patti
    CTO, Vice President of Design Engineering
    Tezzaron Semiconductor

    • Achieving fine 3-D pitch
    • 3-D as a scaling solution
    • 2.5-D and 3-D process updates
    • New applications and technology approaches


  • Continued Adoption of Low Temperature Direct Bond Technology for High Volume 3-D Commercial Applications

    Chris Sanders
    CTO / Director Business Development
    Ziptronix

    • Homogeneous and heterogeneous direct bonding
    • Submicron technology scaling
    • Implementation options
    • Wafer-to-wafer applications; image sensors and beyond
    • Technology adoption status



Leading Global Research Efforts
TSVs – Heterogeneous Integration – Imagers – and Moore

  • 3-D IC Technologies at CEA-Leti

    Patrick Leduc
    3-D IC Program Manager
    CEA-Leti

    • Interposer technology
    • 3-D IC technology
    • Evolution of Leti 3-D tool box
    • An initiative to boost 3-D TSV adoption


  • The Development of TSV Technology in China

    Daquan Yu
    Professor
    Chinese Academy of Sciences – Institute of Microelectronics

    • Research status of TSV technology
    • Progress of equipment development for TSV process
    • Progress of materials development for TSV process
    • EDA tool development for TSV integration


  • Break 3:45 – 4:15 pm


  • High Density 3-D IC Integration: Enabling Smart Imagers

    John Lannon
    Senior Research Engineer
    RTI International

    • Application examples
    • Evolution of high density integration technology
    • Remaining challenges


  • 3-D Integration – Driving Heterogeneous Integration for System in Packages

    M. Juergen Wolf
    Fraunhofer IZM-ASSID

    • 3-D wafer level approaches and alternatives
    • TSV key processes and status
    • 3-D Interconnect formation
    • Silicon interposer
    • Challenge and bottlenecks


  • A Versatile 2.5-D Heterogeneous Design and Integration Platform for "More-than-Moore" Technology

    Dim-Lee Kwong
    Executive Director
    Institute of Microelectronics

    • Design considerations for heterogeneous integration using TSI
    • 2.5-D TSI technology platform
    • The smart building blocks with I/O library
    • Integrated PDK and EDA design flow
    • The implementation—the MPW shuttle approach for TSI heterogeneous integration


  • Evening Reception 6:00 – 8:00 pm
    Sponsored by EV Group



 

 

Conference Agenda
December 14, 2012

Commercial Perspectives and Impact of 3-D Design

  • Design for 3-D Infrastructure: Quo Vadis

    Riko Radojcic
    Director
    Qualcomm

    • Tools, methodologies, models
    • Lessons from memory on logic
    • Status of 3-D standards
    • Challenges beyond memory on logic


  • WIOMING: 3-D Technology, Design and Test Solutions for Ultra High Memory Bandwidth

    Georg Kimmich
    Technology Manager
    ST Ericsson

    Denis Dutoit
    Research Engineer
    CEA-Leti

    • 3-D integration technology tool box
    • WIOMING: performance, architecture, design methods, test solutions, manufacturing, and validation
    • Outlook – 3-D technology for mobile applications

  • Manufacturing and Design Optimization for 2.5-D Integration

    Arifur Rahman
    Product Architect
    Altera Corporation

    • Overview and lessons learned
    • Design consideration


  • 3-D PathFinding Tools and Design Flow

    Lisa McIlrath
    President, CEO
    R3Logicn

    • Defining the problem
    • Near term: 2.5-D interposer flow
    • Constraint-driven floorplanning /placement
    • 3-D cell libraries


  • Going 3-D by Evolution Rather than by Revolution: an EDA Supplier's Viewpoint

    Steve Smith
    Senior Director of Marketing, 3-D IC
    Synopsys

    • Why now?
    • Scoping the challenges
    • Technology trends and timeline
    • 2.5-D and 3-D IC design flow
    • Beyond IC; heading toward heterogeneous systems


  • Break 10:30 – 11:00 am



3-D Testing and Cost Models

  • 3-D-COSTAR: A Cost Model for 3-D Stacked ICs

    Erik Jan Marinissen
    Principal Scientist
    IMEC

    • Cost model assists in making trade-offs
    • Design, manufacturing, test, packaging, and logistic costs
    • Die-to-Die, Die-to-Wafer, and Wafer-to-Wafer stacking
    • Pre-bond, mid-bond, post-bond, and final testing


  • Interconnect Testing of JEDEC Wide-I/O DRAM-on-Logic 3-D Die Stacks

    Bassilios Petrakis
    Cadence Design Systems

    • JEDEC Wide-I/O DRAM standard includes boundary scan
    • 3-D-DfT architecture extended to cover this
    • Dedicated interconnect ATPG
    • Successful case study on TSMC test chip


  • Fine-Pitch Micro-Bump Probing

    Daniel Rishavy
    Product Manager
    Tokyo Electron America

    • Avoiding the use of dedicated pre-bond probe pads
    • Probing on fine-pitch micro-bumps
    • Concerted alignment effort between probe card and probe station


  • Lunch 12:30 – 1:30 pm
    Sponsored by SUSS MicroTec



Insight on Manufacturing and Process Tooling

  • From Unit Processes to Smart Process Integration

    Thorsten Matthias
    Director of Business Development
    EV Group

    • The paradigm shift in 3-D IC manufacturing
    • Innovative process integration
    • High yield through reduced manufacturing complexity


  • Wafer Level Interconnects for Packaging—Challenges and Solutions

    Sesh Ramaswami
    Managing Director
    Applied Materials

    • Roadmap
    • Pillar/bump technologies – implications in 3-D stacks
    • Industry progress and learnings in TSV for 3-D and 2.5-D integration
    • CoO progress: 2009-2012
    • A perspective on requirements for 20nm and beyond


  • Temporary Bonding and "PowerPoint Engineering"

    Wilfried Bair
    General Manager
    SUSS MicroTec

    • One process does not fit all
    • Chemical demands
    • Physical demands
    • Throughput, quality, and cost
    • Process extendability


  • Break 3:00 – 3:15 pm


  • Design and Testing Strategies for Modular 3-D Multiprocessor Systems Using Die-level Through Silicon Via Technology

    Yusuf Leblebici
    Professor
    Swiss Federal Institute of Technology

    • 3-D modular multi-core architectures
    • Homogeneous and heterogeneous systems for 3-D integration
    • Inter-layer communication schemes and network-on-chip solutions
    • Die-level via-last copper TSV technology
    • Testing strategies and experimental results


  • Scaling Hybrid-Integration of Silicon Photonics for Low Power Communications

    John E. Cunningham
    Consulting Hardware Engineer
    Oracle Corporation

    • DARPA UNIC
    • SiPhotonics
    • Macrochip
    • Packaging and Integration

  • Closing Comments 4:15 pm

 

 

 


For Further Information Contact:

Karen Dobkin
2520 Independence Blvd., Suite 201
Wilmington, NC 28412
Tel: 910.452.0006
Fax: 910.523.5504
E-mail: Karen@teamycc.com

Purchase Proceedings